AS4C2M32S-6BIN

Alliance Memory
913-AS4C2M32S-6BIN
AS4C2M32S-6BIN

製造商:

說明:
DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 213

庫存:
213 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$87.13 HK$87.13
HK$80.97 HK$809.70
HK$78.50 HK$1,962.50
HK$76.61 HK$3,830.50
HK$74.80 HK$7,480.00
HK$72.34 HK$13,744.60
HK$67.98 HK$38,748.60
HK$66.25 HK$75,525.00
2,660 報價

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: DRAM
RoHS:  
SDRAM
64 Mbit
32 bit
166 MHz
TFBGA-90
2 M x 32
5.4 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C2M32S
Tray
品牌: Alliance Memory
組裝國家: TW, CN
擴散國: TW, CN
原產國: TW, CN
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 190
子類別: Memory & Data Storage
電源電流 - 最大值: 95 mA
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所選屬性: 0

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321020
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.