AS6C8008-55BIN

Alliance Memory
913-AS6C8008-55BIN
AS6C8008-55BIN

製造商:

說明:
SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 8

庫存:
8 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$64.44 HK$64.44
HK$59.92 HK$599.20
HK$58.03 HK$1,450.75
HK$56.72 HK$2,836.00
HK$55.32 HK$5,532.00
HK$52.20 HK$13,050.00
HK$51.38 HK$24,662.40

商品屬性 屬性值 選擇屬性
Alliance Memory
產品類型: SRAM
RoHS:  
8 Mbit
1 M x 8
55 ns
Parallel
5.5 V
2.7 V
60 mA
- 40 C
+ 85 C
SMD/SMT
TFBGA-44
Tray
品牌: Alliance Memory
組裝國家: Not Available
擴散國: Not Available
原產國: TW, CN
存儲類型: SDR
濕度敏感: Yes
產品類型: SRAM
系列: AS6C8008
原廠包裝數量: 480
子類別: Memory & Data Storage
類型: Asynchronous
每件重量: 2.490 g
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所選屬性: 0

CNHTS:
8542319090
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232019
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
3A991.b.2.a

Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.