Name: ISSI IS43LR32160C-6BLI
Brand: ISSI
SKU: 870-IS43LR32160C6BLI
Price: 75.87 HKD
Availability: InStock

說明：

DRAM 512M, 1.8V, 166Mhz Mobile DDR

Pricing (HKD)

數量	單價	總價
	HK$75.87	HK$75.87
	HK$70.53	HK$705.30
	HK$68.39	HK$1,709.75
	HK$66.83	HK$3,341.50
	HK$65.51	HK$6,551.00

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商品屬性	屬性值	選擇屬性
製造商:	ISSI
產品類型:	DRAM
RoHS:
類型:	SDRAM Mobile - LPDDR
存儲容量:	512 Mbit
數據匯流排寬度:	32 bit
最高時鐘頻率:	166 MHz
封裝/外殼:	BGA-90
組織:	16 M x 32
存取時間:	6 ns
電源電壓 - 最小值:	1.7 V
電源電壓 - 最大值:	1.95 V
最低工作溫度:	- 40 C
最高工作溫度:	+ 85 C
系列:	IS43LR32160C
封裝:	Tray
品牌:	ISSI
組裝國家:	Not Available
擴散國:	Not Available
原產國:	TW, CN
濕度敏感:	Yes
安裝風格:	SMD/SMT
產品類型:	DRAM
原廠包裝數量:	240
子類別:	Memory & Data Storage
電源電流 - 最大值:	60 mA
公司名稱:	RLDRAM2
每件重量:	167.700 mg

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所選屬性: 0

篩選文檔:

規格書

IS43LR32160C-6BLI 規格書 (PDF)

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CNHTS:: 8542329000
USHTS:: 8542320028
JPHTS:: 854232021
MXHTS:: 8542320201
ECCN:: EAR99

IS43LR16800F 2Mx16 Mobile DDR SDRAM

ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

Mobile DDR SDRAM

ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.