IS43R16160D-5TLI

ISSI
870-IS43R16160D-5TLI
IS43R16160D-5TLI

製造商：

說明：
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於ISSI IS43R16160D-5TLI的資訊

供貨情況

庫存：
0

您仍可購買此商品作為延期交貨訂單。

最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$44.55 HK$44.55
HK$41.51 HK$415.10
HK$40.28 HK$1,007.00
HK$39.29 HK$1,964.50
HK$38.39 HK$4,146.12
HK$37.07 HK$8,007.12
HK$36.17 HK$19,531.80
HK$35.26 HK$38,080.80
HK$34.36 HK$89,061.12

可能更換

ISSI IS43R16160F-5TLI
ISSI
DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS, IT
與當前零件比較

商品屬性 屬性值 選擇屬性
ISSI
產品類型: DRAM
RoHS:  
SDRAM - DDR
256 Mbit
16 bit
200 MHz
TSOP-II-66
16 M x 16
5 ns
2.3 V
2.7 V
- 40 C
+ 85 C
IS43R16160D
Tray
品牌: ISSI
組裝國家: Not Available
擴散國: Not Available
原產國: TW, CN
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 108
子類別: Memory & Data Storage
電源電流 - 最大值: 330 mA
每件重量: 556 mg
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

Models

此功能需要啟用JavaScript。

CNHTS:
8542319090
USHTS:
8542320024
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

IS43R32800D 8Mx32 256-Mbit DDR SDRAM

ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64MB to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages.

DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。