IXFK360N15T2

Name: IXYS IXFK360N15T2
Brand: IXYS
SKU: 747-IXFK360N15T2
Price: 265.67 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

747-IXFK360N15T2

製造商編號：

IXFK360N15T2

製造商：

IXYS

說明：

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET

規格書:

IXFK360N15T2 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於IXYS IXFK360N15T2的資訊

庫存量: 269

庫存：: 269 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 24 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$265.67	HK$265.67
	HK$197.86	HK$1,978.60
	HK$188.57	HK$18,857.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-264-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	150 V
Id - C連續漏極電流:	360 A
Rds On - 漏-源電阻:	4 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	715 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	1.67 mW
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	PH
下降時間:	265 ns
互導 - 最小值:	140 S
產品類型:	MOSFETs
上升時間:	170 ns
系列:	IXFK360N15
原廠包裝數量:	25
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	115 ns
標準開啟延遲時間:	50 ns
每件重量:	10 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

IXFK360N15T2 規格書 (PDF)

此功能需要啟用JavaScript。

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8541210100
BRHTS:: 85415020
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (T_C=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.