Name: IXYS IXFQ26N50P3
Brand: IXYS
SKU: 747-IXFQ26N50P3
Price: 67.08 HKD
Availability: InStock

說明：

MOSFET Polar3 HiPerFET Power MOSFET

Pricing (HKD)

數量	單價	總價
	HK$67.08	HK$67.08
	HK$48.74	HK$487.40
	HK$36.66	HK$4,399.20
	HK$34.61	HK$17,651.10

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-3P-3
晶體管極性:	N-Channel
Vds - 漏-源擊穿電壓:	500 V
Id - C連續漏極電流:	26 A
Rds On - 漏-源電阻:	240 mOhms
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
產品類型:	MOSFETs
系列:	IXFQ26N50
原廠包裝數量:	30
子類別:	Transistors
每件重量:	1.600 g

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所選屬性: 0

篩選文檔:

規格書

IXFQ26N50P3 規格書

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CNHTS:: 8541210000
CAHTS:: 8541900000
USHTS:: 8541900080
JPHTS:: 8542900006
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.