IXFT60N65X2HV

IXYS
747-IXFT60N65X2HV
IXFT60N65X2HV

製造商：

說明：
MOSFET 650V/60A TO-268HV

規格書:
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庫存：
暫無庫存
工廠前置作業時間：
27 週 工廠預計生產時間。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$116.56 HK$116.56
HK$71.10 HK$711.00
HK$61.16 HK$7,339.20
HK$61.07 HK$31,145.70

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
D3PAK-3 (TO-268-3)
N-Channel
1 Channel
650 V
60 A
52 mOhms
- 30 V, 30 V
3.5 V
108 nC
- 55 C
+ 150 C
780 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: KR
下降時間: 12 ns
互導 - 最小值: 23 S
濕度敏感: Yes
產品類型: MOSFETs
上升時間: 23 ns
系列: 650V Ultra Junction X2
原廠包裝數量: 30
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 63 ns
標準開啟延遲時間: 30 ns
每件重量: 4 g
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所選屬性: 0

規格書

PCN

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

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Littelfuse provides a broad portfolio of components for heat pumps, including fuses, TVS diodes, gate drivers, and more. The heat pump market is growing quickly, driven by government initiatives to reduce greenhouse gas emissions and rising energy costs. With inverter-driven motors improving system efficiencies, heat pumps can now be used in a wide range of climates. Learn how Littelfuse technologies make heat pumps safer, more reliable, and more energy efficient. Heat pumps can be used in a wide range of climates due to the inverter-driven motors improving system efficiencies. These components are suitable for various applications such as energy management, security systems, HVAC systems, smoke detectors, and IoT-controlled appliances. Littelfuse offers protect, control, and sense technologies to improve buildings' reliability, safety, and energy efficiency.

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X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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