IXTA130N065T2

IXYS
747-IXTA130N065T2
IXTA130N065T2

製造商：

說明：
MOSFET 130 Amps 65V

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於IXYS IXTA130N065T2的資訊

供貨情況

庫存：
暫無庫存
工廠前置作業時間：
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$32.55 HK$32.55
HK$21.37 HK$213.70
HK$15.62 HK$1,562.00
HK$13.89 HK$6,945.00
HK$11.92 HK$11,920.00
HK$11.51 HK$28,775.00
HK$11.18 HK$55,900.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
REACH - SVHC:
Si
SMD/SMT
TO-263-3
N-Channel
1 Channel
65 V
130 A
6.6 mOhms
- 20 V, 20 V
2 V
79 nC
- 55 C
+ 175 C
250 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: Not Available
下降時間: 17 ns
互導 - 最小值: 38 S
產品類型: MOSFETs
上升時間: 42 ns
系列: IXTA130N065
原廠包裝數量: 50
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 20 ns
標準開啟延遲時間: 11 ns
每件重量: 4 g
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

此功能需要啟用JavaScript。

CNHTS:
8541590000
USHTS:
8541290065
TARIC:
8541500000
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。