1EDI2002ASXUMA2

Infineon Technologies
726-1EDI2002ASXUMA2
1EDI2002ASXUMA2

製造商:

說明:
閘極驅動器 DRIVER-IC

壽命週期:
NRND:
不建議用於新設計。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 266

庫存:
266 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
數量超過266會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$90.91 HK$90.91
HK$71.02 HK$710.20
HK$66.01 HK$1,650.25
HK$60.50 HK$6,050.00
HK$57.87 HK$14,467.50
HK$56.31 HK$28,155.00
完整捲(訂購多個1000)
HK$51.54 HK$51,540.00
2,000 報價

備用包裝

製造商 元件編號:
包裝:
Reel, Cut Tape
供貨情況:
庫存量
價格:
HK$101.76
最小值:
1

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 閘極驅動器
RoHS:  
IGBT, MOSFET Gate Drivers
SMD/SMT
SOIC-36
1 Driver
1 Output
5 mA
4.65 V
18 V
120 ns
150 ns
- 40 C
+ 125 C
Single
AEC-Q100
Reel
Cut Tape
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: AT
濕度敏感: Yes
產品類型: Gate Drivers
原廠包裝數量: 1000
子類別: PMIC - Power Management ICs
技術: Si
公司名稱: EiceDRIVER
零件號別名: 1EDI2002AS SP001362894
每件重量: 695.100 mg
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所選屬性: 0

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CNHTS:
8542399000
USHTS:
8542310075
ECCN:
EAR99

EiceDRIVER隔離式與非隔離式閘極驅動器IC

英飛凌EiceDRIVER™隔離式與非隔離式閘極驅動器IC適用於MOSFET、IGBT和IGBT模組,能提供經過最佳化的高低電壓閘極驅動器解決方案。這些隔離式與非隔離式閘極驅動器IC是專為打造可靠且高效的應用所設計。經過最佳化的閘極驅動器配置,對於無論是獨立形式或功率模組等所有電源開關而言,都是必不可少的。英飛凌閘極驅動器提供介於0.1A到最高10A的多樣化典型輸出電流選項,適合電源裝置的所有尺寸。

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

1通道EiceDRIVER™ MOSFET閘極驅動器IC

Infineon Technologies 1通道EiceDRIVER™ MOSFET閘極驅動器IC是控制IC、功能強大的MOSFET,及GaN開關裝置之間的重要連結。這些閘極驅動器IC可在系統層級達到高度效率、優異的功率密度,與一致的系統耐受性。

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.