AIMZHN120R080M1TXKSA1

Infineon Technologies
726-AIMZHN120R080M1T
AIMZHN120R080M1TXKSA1

製造商:

說明:
碳化矽MOSFET Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 80mohm

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 10

庫存:
10 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$90.58 HK$90.58
HK$59.84 HK$598.40
HK$45.70 HK$4,570.00
HK$42.25 HK$20,280.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
31 A
80 mOhms
- 5 V, + 23 V
5.1 V
24 nC
- 55 C
+ 175 C
169 W
Enhancement
CoolSiC
品牌: Infineon Technologies
配置: Single
組裝國家: CN
擴散國: AT
原產國: AT
下降時間: 11 ns
互導 - 最小值: 6.5 S
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 7 ns
系列: CoolSiC 1200V
原廠包裝數量: 240
子類別: Transistors
技術: SiC
標準斷開延遲時間: 18 ns
標準開啟延遲時間: 8 ns
零件號別名: AIMZHN120R080M1T -
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an RDS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.