IPA060N06NXKSA1

Infineon Technologies
726-IPA060N06NXKSA1
IPA060N06NXKSA1

製造商：

說明：
MOSFET MV POWER MOS

規格書:
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庫存量: 199

庫存：
199
可立即送貨
在途量:
500
工廠前置作業時間：
8
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$19.65 HK$19.65
HK$9.62 HK$96.20
HK$8.63 HK$863.00
HK$6.90 HK$3,450.00
HK$6.57 HK$6,570.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
60 V
45 A
6.7 mOhms
- 20 V, 20 V
2.8 V
32 nC
- 55 C
+ 175 C
33 W
Enhancement
OptiMOS
Tube
品牌: Infineon Technologies
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: AT
下降時間: 7 ns
產品類型: MOSFETs
上升時間: 12 ns
系列: OptiMOS 5
原廠包裝數量: 500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 20 ns
標準開啟延遲時間: 12 ns
零件號別名: IPA060N06N SP001099646
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

USB電源供應解決方案

Infineon Technologies USB電源供應解決方案符合比針對智慧型手機的一般充電設計更高額定功率的要求，提供比現有USB標準更高的功率等級。英飛凌供應包含低RDS(on)、高電壓和低電壓功率MOSFET等完整的半導體產品組合，適用於高功率密度，能適當解決熱管理和潛在電磁干擾 (EMI) 等問題。功率等級提高，能為硬碟機、印表機和顯示器，以及像是筆記型電腦等更大型的可攜式電子裝置供電。若要使用最高功率的模式，也需要有特殊額定值的USB纜線。USB PD作為單一纜線解決方案，是比現有USB互連產品更輕薄耐用的替代選擇。

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

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