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IPB120N04S4-01

Name: Infineon IPB120N04S4-01
Brand: Infineon Technologies
SKU: 726-IPB120N04S4-01
Price: 29.59 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

726-IPB120N04S4-01

製造商編號：

IPB120N04S4-01

製造商：

Infineon Technologies

說明：

MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2

規格書:

IPB120N04S4-01 規格書 (PDF)

ECAD模型:

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庫存量: 737

庫存：: 737 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 9 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個1000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$29.59	HK$29.59
	HK$19.32	HK$193.20
	HK$13.56	HK$1,356.00
	HK$11.84	HK$5,920.00
完整捲（訂購多個1000）
	HK$11.01	HK$11,010.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	40 V
Id - C連續漏極電流:	120 A
Rds On - 漏-源電阻:	2 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	176 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	300 W
通道模式:	Enhancement
資格:	AEC-Q100
公司名稱:	OptiMOS
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Infineon Technologies
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	MY
下降時間:	36 ns
產品類型:	MOSFETs
上升時間:	16 ns
系列:	OptiMOS-T2
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	41 ns
標準開啟延遲時間:	34 ns
零件號別名:	SP000705700 IPB12N4S41XT IPB120N04S401ATMA1
每件重量:	4 g

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篩選文檔:

規格書

IPB120N04S4-01 規格書 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Automotive COOLiRFET™ Power MOSFETs

Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize processing techniques that achieve low ON-resistance per silicon area. Additional features of this design are a +175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density, and reliability. With this performance, many applications using these COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs

Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.