IPB200N25N3 G

Infineon Technologies
726-IPB200N25N3GXT
IPB200N25N3 G

製造商：

說明：
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3

規格書:
ECAD模型:
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庫存量: 968

庫存：
968 可立即送貨
工廠前置作業時間：
13 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個1000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$61.73 HK$61.73
HK$46.11 HK$461.10
HK$37.32 HK$3,732.00
HK$33.37 HK$16,685.00
完整捲（訂購多個1000）
HK$29.35 HK$29,350.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

備用包裝

製造商 元件編號:
IPB200N25N3GATMA1
包裝:
Reel, Cut Tape, MouseReel
供貨情況:
庫存量
價格:
HK$67.32
最小值:
1

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
250 V
64 A
17.5 mOhms
- 20 V, 20 V
2 V
86 nC
- 55 C
+ 175 C
300 W
Enhancement
OptiMOS
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: DE
下降時間: 12 ns
互導 - 最小值: 61 S
產品類型: MOSFETs
上升時間: 20 ns
系列: OptiMOS 3
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 45 ns
標準開啟延遲時間: 18 ns
零件號別名: SP000677896 IPB2N25N3GXT IPB200N25N3GATMA1
每件重量: 4 g
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所選屬性: 0

規格書

Product Catalogs

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

Infineon OptiMOS™ 3

Infineon's OptiMOS™ 3 40V, 60V, and 80V families reduce power losses up to 30% in a given standard TO package. The low switching losses and on-state resistance of the devices enable an increase in power densities by up to 30% and a reduction in part count for a given application by more than 25%, compared to competitive solutions. The OptiMOS™ 3 devices offer best-in-class RDS(on), achieving an RDS(on) as low as 1.6mΩ for 40V products in SuperSO8™ packages, 3.5mΩ for 60V products in D-PAK packages, and 2.5mΩ for 80V products in D2-PAK packages. The MOSFETs are ideal for a variety of power conversion and management applications, including SMPSs, DC/DC converters, and DC motor drives.

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