IPD80R280P7ATMA1

Infineon Technologies
726-IPD80R280P7ATMA1
IPD80R280P7ATMA1

製造商：

說明：
MOSFET LOW POWER_NEW

規格書:
ECAD模型:
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庫存量: 5,451

庫存：
5,451 可立即送貨
工廠前置作業時間：
52 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個2500）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$30.66 HK$30.66
HK$19.97 HK$199.70
HK$14.55 HK$1,455.00
HK$11.84 HK$5,920.00
HK$11.51 HK$11,510.00
完整捲（訂購多個2500）
HK$10.77 HK$26,925.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
17 A
280 mOhms
- 30 V, 30 V
3 V
36 nC
- 50 C
+ 150 C
101 W
Enhancement
CoolMOS
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: DE
下降時間: 5 ns
產品類型: MOSFETs
上升時間: 6 ns
系列: CoolMOS P7
原廠包裝數量: 2500
子類別: Transistors
標準斷開延遲時間: 40 ns
標準開啟延遲時間: 10 ns
零件號別名: IPD80R280P7 SP001422596
每件重量: 330 mg
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

USB電源供應解決方案

Infineon Technologies USB電源供應解決方案符合比針對智慧型手機的一般充電設計更高額定功率的要求，提供比現有USB標準更高的功率等級。英飛凌供應包含低RDS(on)、高電壓和低電壓功率MOSFET等完整的半導體產品組合，適用於高功率密度，能適當解決熱管理和潛在電磁干擾 (EMI) 等問題。功率等級提高，能為硬碟機、印表機和顯示器，以及像是筆記型電腦等更大型的可攜式電子裝置供電。若要使用最高功率的模式，也需要有特殊額定值的USB纜線。USB PD作為單一纜線解決方案，是比現有USB互連產品更輕薄耐用的替代選擇。

CoolMOS™ 7超級結MOSFET

Infineon Technologies CoolMOS™ 7超級結MOSFET在能源效率、功率密度和使用便利性奠定新標準。CoolMOS 7技術採用創新的封裝概念與各種技術，係專為特定應用最佳化。CoolMOS 7 MOSFETS可用來縮小電動車充電站體積，提高其輸出，加快充電速度。CoolMOS 7的推出，使新一代的配接器和充電器體積更為輕巧、效率更優異。有了CoolMOS 7，將幫助工程師推出成本更低、效率更高的再生能源系統。

CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

800V CoolMOS™ P7 MOSFETs

Infineon 800V CoolMOS™ P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7，英飛淩不斷在價格、性能和品質等方面樹立標杆。

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