IR21271SPBF
影像僅供參考
請參閱產品規格
請參閱產品規格
942-IR21271SPBF
IR21271SPBF
製造商：
說明：
閘極驅動器 1 HI SIDE DRVR NONINVERTING INPUT
閘極驅動器 1 HI SIDE DRVR NONINVERTING INPUT
庫存量: 2,474
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庫存：
-
2,474 可立即送貨發生意外錯誤了。請稍後再試。
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工廠前置作業時間：
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24 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| HK$20.22 | HK$20.22 | |
| HK$15.04 | HK$150.40 | |
| HK$12.41 | HK$310.25 | |
| HK$11.84 | HK$1,184.00 | |
| HK$11.59 | HK$2,897.50 | |
| HK$11.18 | HK$5,590.00 | |
| HK$10.93 | HK$10,930.00 | |
| HK$10.44 | HK$26,100.00 | |
| HK$9.86 | HK$37,468.00 |
備用包裝
規格書
Application Notes
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS212(7,8,71) and IR212(7,8,71) Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
- Using the Current Sensing IR212x Gate Driver ICs (PDF)
Models
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
