IRS2153DPBF
影像僅供參考
請參閱產品規格
請參閱產品規格
942-IRS2153DPBF
IRS2153DPBF
製造商：
說明：
閘極驅動器 Self-Osc Half Bridge Drvr 1.1us
閘極驅動器 Self-Osc Half Bridge Drvr 1.1us
壽命週期:
NRND:
不建議用於新設計。
庫存量: 1,120
-
庫存：
-
1,120 可立即送貨發生意外錯誤了。請稍後再試。
-
工廠前置作業時間：
-
20 週 工廠預計生產時間數量大於所顯示的數量。
Pricing (HKD)
| 數量 | 單價 |
總價
|
|---|---|---|
| HK$28.61 | HK$28.61 | |
| HK$21.45 | HK$214.50 | |
| HK$18.66 | HK$466.50 | |
| HK$17.76 | HK$1,776.00 | |
| HK$16.85 | HK$4,212.50 | |
| HK$16.28 | HK$8,140.00 | |
| HK$15.78 | HK$15,780.00 | |
| HK$15.70 | HK$47,100.00 |
規格書
Application Notes
- Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality (PDF)
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- IRS2153(1)D and IR2153(1)/IR2153(1)D Comparison (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Models
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542399000
- CAHTS:
- 8542310000
- USHTS:
- 8542310075
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
The factory is currently not accepting orders for this product.