S29GL01GS10TFI020

Infineon Technologies
797-S29GL01GS10TFI02
S29GL01GS10TFI020

製造商：

說明：
NOR快閃 1G 3V 100ns Parallel NOR快閃

規格書:
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庫存量: 1,557

庫存：
1,557 可立即送貨
工廠前置作業時間：
16 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$157.17 HK$157.17
HK$145.82 HK$1,458.20
HK$141.30 HK$3,532.50
HK$137.85 HK$6,892.50
HK$134.48 HK$13,448.00
HK$130.04 HK$32,510.00
HK$126.75 HK$63,375.00
910 報價

商品屬性 屬性值 選擇屬性
Infineon
產品類型: NOR快閃
RoHS:  
SMD/SMT
TSOP-56
S29GL01G/512/256/128S
1 Gbit
2.7 V
3.6 V
60 mA
Parallel
64 M x 16
16 bit
Asynchronous
- 40 C
+ 85 C
Tray
品牌: Infineon Technologies
組裝國家: TH
擴散國: CN
原產國: CN
濕度敏感: Yes
產品類型: NOR Flash
速度: 100 ns
原廠包裝數量: 910
子類別: Memory & Data Storage
公司名稱: MirrorBit
每件重量: 17.327 g
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所選屬性: 0

規格書

CNHTS:
8542329090
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320312
KRHTS:
8542321040
TARIC:
8542326100
MXHTS:
8542320299
ECCN:
3A991.b.1.a

MIRRORBIT™ NOR GL Flash Memory Device

Infineon Technologies MIRRORBIT™ NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MIRRORBIT NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MIRRORBIT NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MIRRORBIT GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MIRRORBIT NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MIRRORBIT GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

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