RGS80TSX2HRC11

ROHM Semiconductor
755-RGS80TSX2HRC11
RGS80TSX2HRC11

製造商:

說明:
IGBT 10s Short-Circuit Tolerance, 1200V 40A, TO-247N, Field Stop Trench IGBT for Automotive

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 334

庫存:
334 可立即送貨
工廠前置作業時間:
22 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$95.76 HK$95.76
HK$58.36 HK$583.60
HK$54.09 HK$5,409.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: IGBT
RoHS:  
REACH - SVHC:
Si
TO-247N-3
Through Hole
Single
1.2 kV
2.1 V
30 V
80 A
555 W
- 40 C
+ 175 C
AEC-Q101
Tube
品牌: ROHM Semiconductor
組裝國家: Not Available
擴散國: Not Available
原產國: TH
柵射極漏電電流: 500 nA
產品類型: IGBT Transistors
原廠包裝數量: 450
子類別: IGBTs
零件號別名: RGS80TSX2HR
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101-rated automotive IGBTs available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that reduces the size and improves the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. ROHM Semiconductor RGS IGBTs provide increased energy savings in various high voltage and high current applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.