RGT30TM65DGC9

ROHM Semiconductor
755-RGT30TM65DGC9
RGT30TM65DGC9

製造商:

說明:
IGBT 5s Short-Circuit Tolerance, 650V 15A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,862

庫存:
3,862 可立即送貨
工廠前置作業時間:
22 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$16.52 HK$16.52
HK$11.92 HK$119.20

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: IGBT
RoHS:  
Si
TO-220NFM-3
Through Hole
Single
650 V
2.1 V
30 V
14 A
32 W
- 40 C
+ 175 C
Tube
品牌: ROHM Semiconductor
組裝國家: Not Available
擴散國: Not Available
原產國: KR
柵射極漏電電流: 200 nA
產品類型: IGBT Transistors
原廠包裝數量: 1000
子類別: IGBTs
零件號別名: RGT30TM65D
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.