SCT3030ALHRC11

ROHM Semiconductor
755-SCT3030ALHRC11
SCT3030ALHRC11

製造商：

說明：
碳化矽MOSFET 650V 70A 262W SIC 30mOhm TO-247N

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庫存量: 376

庫存：
376 可立即送貨
工廠前置作業時間：
27 週 工廠預計生產時間數量大於所顯示的數量。
數量超過376會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$333.16 HK$333.16

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: 碳化矽MOSFET
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
70 A
39 mOhms
- 4 V, + 22 V
5.6 V
104 nC
- 55 C
+ 175 C
262 W
Enhancement
AEC-Q101
品牌: ROHM Semiconductor
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: TH
下降時間: 27 ns
互導 - 最小值: 9.4 S
封裝: Tube
產品: MOSFET's
產品類型: SiC MOSFETS
上升時間: 41 ns
系列: SCT3x
原廠包裝數量: 450
子類別: Transistors
技術: SiC
晶體管類型: 1 N-Channel
標準斷開延遲時間: 48 ns
標準開啟延遲時間: 22 ns
零件號別名: SCT3030ALHR
每件重量: 6 g
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所選屬性: 0 

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

規格書

Other

Specification Sheets

Technical Resources

Test/Quality Data

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor SCT3x series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This design results in significantly lower switching loss and faster switching speeds, improving operational efficiency while reducing power loss in a variety of equipment. ROHM Semiconductor SCT3x includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

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