TP65H030G4PWS

Renesas Electronics
227-TP65H030G4PWS
TP65H030G4PWS

製造商：

說明：
氮化鎵場效應管 650V, 30mohm GaN FET in TO247-3L

壽命週期:
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庫存量: 1,440

庫存：
1,440 可立即送貨
工廠前置作業時間：
16 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$82.94 HK$82.94
HK$49.57 HK$495.70
HK$40.20 HK$4,020.00
HK$38.63 HK$19,315.00

商品屬性 屬性值 選擇屬性
Renesas Electronics
產品類型: 氮化鎵場效應管
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
55.7 A
41 mOhms
- 20 V, + 20 V
4.8 V
24.5 nC
- 55 C
+ 150 C
192 W
Enhancement
SuperGaN
品牌: Renesas Electronics
配置: Single
組裝國家: CN
擴散國: JP
原產國: CN
下降時間: 8 ns
封裝: Tube
產品: FETs
產品類型: GaN FETs
上升時間: 6.8 ns
系列: Gen IV SuperGaN
原廠包裝數量: 960
子類別: Transistors
技術: GaN
晶體管類型: 1 N-Channel
類型: GaN FET
標準斷開延遲時間: 89.2 ns
標準開啟延遲時間: 40.8 ns
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所選屬性: 0

規格書

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

TP65H030G4Px 650V 30mΩ GaN FETs

Renesas Electronics TP65H030G4Px 650V 30mΩ Gallium Nitride (GaN) FETs are available in TOLT, TO247, and TOLL packages. These GaN FETs use the Gen IV Plus SuperGaN® platform, which combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and reliability.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

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