ISL78434AVEZ-T7A

Renesas / Intersil
968-ISL78434AVEZ-T7A
ISL78434AVEZ-T7A

製造商:

說明:
閘極驅動器 86V Boot, 4A Peak, Half-Bridge Drv with ADTC, HI/LIinput, du

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,176

庫存:
1,176 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個250)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$39.54 HK$39.54
HK$30.09 HK$300.90
HK$27.78 HK$694.50
完整捲(訂購多個250)
HK$25.15 HK$6,287.50
HK$23.43 HK$11,715.00
HK$21.62 HK$21,620.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Renesas Electronics
產品類型: 閘極驅動器
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
HTSSOP-14
2 Driver
2 Output
4 A
8 V
18 V
10 ns
10 ns
- 40 C
+ 125 C
ISL78434
Reel
Cut Tape
MouseReel
品牌: Renesas / Intersil
組裝國家: Not Available
擴散國: Not Available
原產國: MY
最長斷開延遲時間: 75 ns
最長接通延遲時間: 61 ns
濕度敏感: Yes
運作供電電流: 6.8 mA
Pd - 功率消耗 : 3.5 W
產品類型: Gate Drivers
傳輸延遲 - 最大值: 80 ns
原廠包裝數量: 250
子類別: PMIC - Power Management ICs
技術: Si
每件重量: 54 mg
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所選屬性: 0

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CNHTS:
8542399000
USHTS:
8542390090
TARIC:
8542399000
ECCN:
EAR99

ISL78434 100V Half-Bridge MOSFET Driver

Renesas Electronics ISL78434 100V Half-Bridge MOSFET Driver is an Automotive Grade (AEC-Q100 Grade 1) high voltage, high frequency, half-bridge NMOS FET driver for driving the gates of up to 70V half-bridge topologies. The ISL78434 has dual independent inputs for controlling the high-side and low-side driver separately and independent sourcing and sinking pins for each gate driver. 

汽車產品

Renesas Electronics 汽車產品提供可靠性、經濟性和尖端技術,以滿足汽車市場的需求。Renesas Electronics 汽車產品是一系列汽車產品,旨在提供卓越的性能並保持領先於行業當前趨勢。Renesas非常注重品質,並得到專門的客戶支援。這些裝置具有卓越的產品生命週期,可確保提供持久的解決方案。

Automotive Power Devices

Renesas Electronics Automotive Power Devices are equipped with built-in peripheral and protection functions. The Renesas Electronics devices are designed for system reliability enhancement and unit downsizing. The devices offer a comprehensive range of intelligent power switches, thermal FETs, MOSFET drivers, and motor drivers. Renesas power devices achieve low on-resistance specifications thanks to ultra-fine technologies like the groundbreaking 0.25um ANL3 process and innovative multi-bonding mount technology.