SCT055W65G3-4AG

STMicroelectronics
511-SCT055W65G3-4AG
SCT055W65G3-4AG

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說明：
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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庫存量: 47

庫存：
47 可立即送貨
工廠前置作業時間：
22 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$114.59 HK$114.59
HK$91.90 HK$919.00
HK$80.31 HK$8,031.00
HK$58.03 HK$34,818.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: 碳化矽MOSFET
RoHS:  
Through Hole
HiP-247-4
N-Channel
1 Channel
650 V
30 A
72 mOhms
- 18 V, + 18 V
4.2 V
32 nC
- 55 C
+ 200 C
210 W
Enhancement
AEC-Q100
品牌: STMicroelectronics
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 10 ns
封裝: Tube
產品類型: SiC MOSFETS
上升時間: 3.6 ns
原廠包裝數量: 600
子類別: Transistors
技術: SiC
標準斷開延遲時間: 21 ns
標準開啟延遲時間: 12 ns
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所選屬性: 0

規格書

PCN

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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