似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

SCT070H120G3AG

Name: STMicroelectronics SCT070H120G3AG
Brand: STMicroelectronics
SKU: 511-SCT070H120G3AG
Price: 100.04 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-SCT070H120G3AG

製造商編號：

SCT070H120G3AG

製造商：

STMicroelectronics

說明：

碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

完成您的設計

規格書:

SCT070H120G3AG 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics SCT070H120G3AG的資訊

庫存量: 85

庫存：: 85 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 21 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$100.04	HK$100.04
	HK$70.03	HK$700.30
	HK$60.25	HK$6,025.00
完整捲（訂購多個1000）
	HK$56.31	HK$56,310.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	H2PAK-7
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	30 A
Rds On - 漏-源電阻:	87 mOhms
Vgs - 閘極-源極電壓:	- 18 V, + 18 V
Vgs th - 門源門限電壓 :	4.2 V
Qg - 閘極充電:	37 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	223 W
通道模式:	Enhancement
資格:	AEC-Q101
品牌:	STMicroelectronics
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	IT
下降時間:	9.9 ns
封裝:	Reel
封裝:	Cut Tape
產品類型:	SiC MOSFETS
上升時間:	26.6 ns
原廠包裝數量:	1000
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	17.6 ns
標準開啟延遲時間:	18.7 ns

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

SCT070H120G3AG 規格書 (PDF)

PCN

此功能需要啟用JavaScript。

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.