STD6N60M2

STMicroelectronics
511-STD6N60M2
STD6N60M2

製造商:

說明:
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,265

庫存:
2,265 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個2500)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$16.36 HK$16.36
HK$10.44 HK$104.40
HK$7.09 HK$709.00
HK$6.01 HK$3,005.00
HK$5.21 HK$5,210.00
完整捲(訂購多個2500)
HK$4.78 HK$11,950.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
STD6N60M2
品牌: STMicroelectronics
通道模式: Enhancement
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 22.5 ns
Id - C連續漏極電流: 4.5 A
最高工作溫度: + 150 C
最低工作溫度: - 55 C
安裝風格: SMD/SMT
通道數: 1 Channel
封裝/外殼: DPAK-3 (TO-252-3)
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
Pd - 功率消耗 : 60 W
產品類型: MOSFETs
Qg - 閘極充電: 8 nC
Rds On - 漏-源電阻: 1.06 Ohms
上升時間: 7.4 ns
原廠包裝數量: 2500
子類別: Transistors
技術: Si
公司名稱: MDmesh
晶體管極性: N-Channel
晶體管類型: 1 N-Channel
標準斷開延遲時間: 24 ns
標準開啟延遲時間: 9.5 ns
Vds - 漏-源擊穿電壓: 600 V
Vgs - 閘極-源極電壓: - 25 V, 25 V
Vgs th - 門源門限電壓 : 3 V
每件重量: 330 mg
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.