LMG3522R050RQST

LMG3522R050 650V GaN FET

Texas Instrument LMG3522R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3522R050 integrates a silicon driver that enables switching speeds up to 150Vns. TI offers integrated precision gate bias, which results in higher switching SOA when compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to actively control EMI and optimize switching performance.