SSM6N55NU,LF

Name: Toshiba SSM6N55NU,LF
Brand: Toshiba
SKU: 757-SSM6N55NULF
Price: 2.63 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

757-SSM6N55NULF

製造商編號：

SSM6N55NU,LF

製造商：

Toshiba

說明：

MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD

規格書:

SSM6N55NU,LF 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Toshiba SSM6N55NU,LF的資訊

庫存量: 9,594

庫存：: 9,594 可立即送貨

發生意外錯誤了。請稍後再試。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$2.63	HK$2.63
	HK$1.75	HK$17.50
	HK$1.27	HK$127.00
	HK$1.05	HK$525.00
	HK$0.986	HK$986.00
完整捲（訂購多個3000）
	HK$0.806	HK$2,418.00
	HK$0.797	HK$19,128.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	Toshiba
產品類型:	MOSFET
RoHS:
技術:	Si
晶體管極性:	N-Channel
通道數:	2 Channel
公司名稱:	U-MOSVII-H
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Toshiba
配置:	Dual
組裝國家:	Not Available
擴散國:	Not Available
原產國:	TH
產品類型:	MOSFETs
系列:	SSM6N55
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	2 N-Channel
每件重量:	8.500 mg

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所選屬性: 0

篩選文檔:

規格書

SSM6N55NU,LF 規格書 (PDF)

Application Notes

Models

Simulation Model

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541219000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.