TRS3E65F,S1Q

Toshiba
757-TRS3E65F,S1Q
TRS3E65F,S1Q

製造商:

說明:
碳化矽肖特基二極管 RECT 650V 3A RDL SIC SKY

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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$27.13 HK$27.13
HK$12.74 HK$127.40
HK$11.51 HK$1,151.00
HK$9.37 HK$4,685.00

商品屬性 屬性值 選擇屬性
Toshiba
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220F-2L
Single
3 A
650 V
1.45 V
27 A
200 nA
+ 175 C
Tube
品牌: Toshiba
組裝國家: Not Available
擴散國: Not Available
原產國: CN
產品類型: SiC Schottky Diodes
原廠包裝數量: 50
子類別: Diodes & Rectifiers
Vr - 反向電壓: 650 V
零件號別名: TRS3E65F,S1Q(S
每件重量: 2 g
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所選屬性: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100199
BRHTS:
85411099
ECCN:
EAR99

TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in 10.05mm x 15.3mm x 4.45mm dimensions. The Toshiba TRSxE65F Schottky barrier diodes are ideal for power factor correction, uninterruptible power supplies, and DC-DC converters.

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.