IRFR320TRPBF-BE3

Vishay Semiconductors
78-IRFR320TRPBF-BE3
IRFR320TRPBF-BE3

製造商:

說明:
MOSFET TO252 400V 3.1A N-CH MOSFET

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 24,475

庫存:
24,475 可立即送貨
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$20.63 HK$20.63
HK$13.32 HK$133.20
HK$9.12 HK$912.00
HK$7.28 HK$3,640.00
HK$7.21 HK$7,210.00
完整捲(訂購多個2000)
HK$6.83 HK$13,660.00

商品屬性 屬性值 選擇屬性
Vishay
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
400 V
3.1 A
1.8 Ohms
- 20 V, 20 V
2 V
20 nC
- 55 C
+ 150 C
42 W
Enhancement
Reel
Cut Tape
品牌: Vishay Semiconductors
組裝國家: Not Available
擴散國: Not Available
原產國: TW, CN
下降時間: 13 ns
互導 - 最小值: 1.7 S
產品類型: MOSFETs
上升時間: 14 ns
原廠包裝數量: 2000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 30 ns
標準開啟延遲時間: 10 ns
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所選屬性: 0

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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.