FDC8878

Name: onsemi FDC8878
Brand: onsemi
SKU: 512-FDC8878
Price: 10.28 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

512-FDC8878

製造商編號：

FDC8878

製造商：

onsemi

說明：

MOSFET 30V N-Channel PowerTrench MOSFET

規格書:

FDC8878 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於onsemi FDC8878的資訊

庫存量: 12,366

庫存：: 12,366 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 8 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$10.28	HK$10.28
	HK$6.12	HK$61.20
	HK$4.77	HK$477.00
	HK$4.23	HK$2,115.00
完整捲（訂購多個3000）
	HK$4.23	HK$12,690.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	SSOT-6
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	30 V
Id - C連續漏極電流:	8 A
Rds On - 漏-源電阻:	16 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	1.2 V
Qg - 閘極充電:	18 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	800 mW
通道模式:	Enhancement
公司名稱:	PowerTrench
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	onsemi
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	MY
產品類型:	MOSFETs
系列:	FDC8878
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
每件重量:	36 mg

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

FDC8878 規格書 (PDF)

PCN

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering