NVMFS5830NLWFT1G-UM

onsemi
863-FS5830NLWFT1G-UM
NVMFS5830NLWFT1G-UM

製造商：

說明：
MOSFET NFET SO8FL 40V 172A 2.3M0

壽命週期:
新產品:
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規格書:
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庫存量: 1,050

庫存：
1,050 可立即送貨
工廠前置作業時間：
22 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$25.07 HK$25.07
HK$16.19 HK$161.90
HK$11.59 HK$1,159.00
HK$9.70 HK$4,850.00
HK$8.96 HK$8,960.00
完整捲（訂購多個1500）
HK$8.38 HK$12,570.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
DFN-5
N-Channel
1 Channel
40 V
185 A
2.3 mOhms
20 V
2.4 V
113 nC
- 55 C
+ 175 C
158 W
Enhancement
Reel
Cut Tape
品牌: onsemi
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: MY
下降時間: 27 ns
互導 - 最小值: 38 S
產品類型: MOSFETs
上升時間: 32 ns
系列: NVMFS5830NL
原廠包裝數量: 1500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 40 ns
標準開啟延遲時間: 22 ns
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所選屬性: 0

規格書

USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ RDS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low RDS(on) to minimize conduction losses and low QG and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

NVMFS5830NL Single N-Channel Power MOSFET

onsemi NVMFS5830NL Single N-Channel Power MOSFET is a high-efficiency power MOSFET designed for demanding power management applications. Utilizing advanced trench technology, the onsemi NVMFS5830NL delivers exceptionally low RDS(on) performance (2.3mΩ at VGS = 10V), making the MOSFET ideal for minimizing conduction losses in high-current systems. The 5mm x 6mm x 1mm, flat-lead SO-8FL package enhances thermal performance and board space efficiency, while the low gate charge and fast switching characteristics contribute to improved overall system efficiency. A wettable flank option is available for enhanced optical inspection. With the combination of high current capability, low switching losses, and a compact footprint, the NVMFS5830NL is well-suited for use in motor control applications and high-/low-side load switches.

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