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UJ4C075023L8S

Name: onsemi UJ4C075023L8S
Brand: onsemi
SKU: 772-UJ4C075023L8S
Price: 147.47 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

772-UJ4C075023L8S

製造商編號：

UJ4C075023L8S

製造商：

onsemi

說明：

碳化矽MOSFET 750V/23MOSICFETG4TOLL

規格書:

UJ4C075023L8S 規格書

ECAD模型:

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庫存量: 1,269

庫存：: 1,269 可立即送貨

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工廠前置作業時間：: 24 週工廠預計生產時間數量大於所顯示的數量。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$147.47	HK$147.47
	HK$104.97	HK$1,049.70
	HK$98.97	HK$9,897.00
完整捲（訂購多個2000）
	HK$96.75	HK$193,500.00
4,000	報價

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	碳化矽MOSFET
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	MO-229-8
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	750 V
Id - C連續漏極電流:	64 A
Rds On - 漏-源電阻:	23 mOhms
Vgs - 閘極-源極電壓:	- 20 V, + 20 V
Vgs th - 門源門限電壓 :	6 V
Qg - 閘極充電:	37.8 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	278 W
通道模式:	Enhancement
公司名稱:	SiC FET
品牌:	onsemi
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	13 ns
封裝:	Reel
封裝:	Cut Tape
產品:	SiC FET
產品類型:	SiC MOSFETS
上升時間:	25 ns
系列:	UJ4C
原廠包裝數量:	2000
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	136 ns
標準開啟延遲時間:	11 ns

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規格書

UJ4C075023L8S 規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.