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1ED3321MC12NXUMA1

Name: Infineon 1ED3321MC12NXUMA1
Brand: Infineon Technologies
SKU: 726-1ED3321MC12NXUMA
Price: 27.87 HKD
Availability: InStock

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Mouser 編號：

726-1ED3321MC12NXUMA

製造商編號：

1ED3321MC12NXUMA1

製造商：

Infineon Technologies

說明：

閘極驅動器 ISOLATED DRIVER

規格書:

1ED3321MC12NXUMA1 規格書 (PDF)

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庫存量: 9,584

庫存：: 9,584 可立即送貨

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工廠前置作業時間：: 27 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$27.87	HK$27.87
	HK$21.04	HK$210.40
	HK$19.23	HK$480.75
	HK$17.43	HK$1,743.00
	HK$16.44	HK$4,110.00
	HK$15.86	HK$7,930.00
完整捲（訂購多個1000）
	HK$15.29	HK$15,290.00
	HK$14.71	HK$29,420.00
	HK$14.22	HK$71,100.00

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	閘極驅動器
RoHS:
產品:	Isolated Gate Drivers
類型:	High-Side
安裝風格:	SMD/SMT
封裝/外殼:	DSO-16
驅動器數:	1 Driver
輸出數:	1 Output
輸出電流:	8.5 A
電源電壓 - 最小值:	2.5 V
電源電壓 - 最大值:	5.5 V
配置:	Inverting, Non-Inverting
上升時間:	530 ns
下降時間:	370 ns
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
系列:	Enhanced F3 family
封裝:	Reel
封裝:	Cut Tape
品牌:	Infineon Technologies
組裝國家:	ID
擴散國:	DE
原產國:	DE
邏輯類型:	CMOS
最長斷開延遲時間:	92 ns
最長接通延遲時間:	84 ns
濕度敏感:	Yes
運作供電電流:	1.1 mA
輸出電壓:	35 V
Pd - 功率消耗 :	810 mW
產品類型:	Gate Drivers
傳輸延遲 - 最大值:	15 ns
Rds On - 漏-源電阻:	2.35 Ohms
關機:	Shutdown
原廠包裝數量:	1000
子類別:	PMIC - Power Management ICs
技術:	Si
公司名稱:	EiceDRIVER
零件號別名:	1ED3321MC12N SP005433357

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規格書

1ED3321MC12NXUMA1 規格書 (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs

Infineon Technologies 2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs are the crucial link between Control ICs and powerful MOSFET and GaN switching devices. These MOSFET driver ICs enable high system level efficiencies, excellent power density, and consistent system robustness.

EiceDRIVER™ Enhanced F3 Family

Infineon Technologies EiceDRIVER™ Enhanced F3 Family (1ED332x) are 8.5A single channel isolated drivers in a 300mil DSO-16 package. The 1ED332xMC12N family provides features intended to address the market, including soft-off and hard-off fault turn-offs, IGBT and SiC undervoltage lockout (UVLO) settings, two different output current strengths, and two different output configurations. This F3 product family is an excellent solution for SiC MOSFET short-circuit protection.

EiceDRIVER™ Enhanced Isolated Gate Driver ICs

Infineon Technologies EiceDRIVER™ Enhanced Isolated Gate Driver ICs offer protection features such as DESAT, miller clamp, soft-off for MOSFETs, IGBTs, and SiC MOSFETs. These isolated drivers are based on our Coreless Transformer (CT) technology, enabling a world class Common Mode Transient Immunity (CMTI) of 300kV/μs. The miller clamp and accurate short-circuit protection (DESAT) enables superior application safety by avoiding parasitic turn-on and short-circuit when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7. The EiceDRIVER™isolated drivers provide driving capabilities of up to 9A, making booster solutions obsolete. These single-channel and dual-channel gate driver ICs are available as X3 analog family (1ED34xx) and X3 digital family gate driver ICs. The 1ED34xx and 1ED38xx gate driver ICs offer 9A output current and 40V_max output voltage in a space-saving DS0-16 fine pitch wide-body package with 8mm creepage. These ICs features short-circuit clamping and active shutdown and offer the highest isolation capability for the 1500V DC solar inverter application.

1通道EiceDRIVER™ MOSFET閘極驅動器IC

Infineon Technologies 1通道EiceDRIVER™ MOSFET閘極驅動器IC是控制IC、功能強大的MOSFET，及GaN開關裝置之間的重要連結。這些閘極驅動器IC可在系統層級達到高度效率、優異的功率密度，與一致的系統耐受性。

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.