FM25V10-DG

Infineon Technologies
727-FM25V10-DG
FM25V10-DG

製造商:

說明:
F-RAM FRAM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 88

庫存:
88 可立即送貨
工廠前置作業時間:
20 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$142.53 HK$142.53
HK$132.26 HK$1,322.60
HK$128.07 HK$3,201.75
HK$125.03 HK$6,251.50
HK$121.90 HK$12,190.00
HK$116.23 HK$29,057.50
HK$111.05 HK$41,088.50
1,110 報價

商品屬性 屬性值 選擇屬性
Infineon
產品類型: F-RAM
RoHS:  
1 Mbit
SPI
25 MHz, 40 MHz
128 k x 8
DFN-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V10-G
Tube
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: US
濕度敏感: Yes
安裝風格: SMD/SMT
工作電源電壓: 2 V to 3.6 V
產品類型: FRAM
原廠包裝數量: 370
子類別: Memory & Data Storage
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所選屬性: 0

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CNHTS:
8542329090
USHTS:
8542320071
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.