FM28V100-TG

Infineon Technologies
877-FM28V100-TG
FM28V100-TG

製造商：

說明：
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於Infineon Technologies FM28V100-TG的資訊

庫存量: 673

庫存：
673 可立即送貨
工廠前置作業時間：
20 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$208.46 HK$208.46
HK$193.50 HK$1,935.00
HK$187.42 HK$4,685.50
HK$175.58 HK$8,779.00
HK$169.41 HK$16,941.00
HK$165.72 HK$41,430.00
HK$165.63 HK$77,514.84
936 報價

備用包裝

製造商 元件編號:
FM28V100-TGTR
包裝:
Reel, Cut Tape, MouseReel
供貨情況:
庫存量
價格:
HK$230.74
最小值:
1

相似產品

Infineon Technologies FM28V100-TGTR
Infineon Technologies
F-RAM 1M (128Kx8) 2.2-3.6V F-RAM
與當前零件比較

商品屬性 屬性值 選擇屬性
Infineon
產品類型: F-RAM
RoHS:  
1 Mbit
Parallel
128 k x 8
TSOP-32
60 ns
2 V
3.6 V
- 40 C
+ 85 C
FM28V100-TG
Tray
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: US
濕度敏感: Yes
安裝風格: SMD/SMT
工作電源電壓: 3.3 V
產品類型: FRAM
原廠包裝數量: 468
子類別: Memory & Data Storage
每件重量: 9.072 g
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

規格書

CNHTS:
8542329090
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。