GE06MPS06Q-TR GeneSiC Semiconductor

說明：

SiC Schottky Diodes 650V 6A PQFN 8x8 SiC Schottky MPS

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商品屬性	屬性值	選擇屬性
製造商:	Navitas Semiconductor
產品類型:	碳化矽肖特基二極管
付運限制：	Mouser目前不在您的地區出售本產品。
RoHS:
安裝風格:	SMD/SMT
封裝/外殼:	QFN-8
配置:	Single
If - 順向電流:	6 A
Vrrm - 重複反向電壓:	650 V
Vf - 順向電壓:	1.25 V
Ifsm - 順向浪湧電流:	33 A
Ir - 反向電流:	1 uA
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	SiC Schottky MPS
封裝:	Reel
封裝:	Cut Tape
品牌:	GeneSiC Semiconductor
組裝國家:	Not Available
擴散國:	Not Available
原產國:	US
Pd - 功率消耗 :	133 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	3000
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	650 V

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篩選文檔:

規格書

GE06MPS06Q-TR 規格書 (PDF)

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A.

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. These diodes operate at 175°C maximum operating temperature and show temperature-independent switching behavior. The 650V SiC Schottky diodes feature superior Avalanche (UIS) capability and low device capacitance. One key advantage of these diodes is the ease of paralleling devices without thermal runaway. Typical applications include SMPS, EVs, motor drives, LED and HID lighting, medical imaging systems, high voltage sensing, induction heating and welding, and pulsed power.