IDH04G65C5XKSA2

Infineon Technologies
726-IDH04G65C5XKSA2
IDH04G65C5XKSA2

製造商：

說明：
碳化矽肖特基二極管 SIC DIODES

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於Infineon Technologies IDH04G65C5XKSA2的資訊

庫存量: 2,683

庫存：
2,683
可立即送貨
在途量:
900
工廠前置作業時間：
8
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$18.50 HK$18.50
HK$8.01 HK$80.10
HK$7.26 HK$726.00
HK$5.98 HK$2,990.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽肖特基二極管
RoHS:  
Through Hole
TO-220-2
Single
4 A
650 V
1.5 V
38 A
200 nA
- 55 C
+ 175 C
XDH04G65
Tube
品牌: Infineon Technologies
組裝國家: Not Available
擴散國: Not Available
原產國: AT
Pd - 功率消耗 : 48 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 500
子類別: Diodes & Rectifiers
公司名稱: CoolSiC
Vr - 反向電壓: 650 V
零件號別名: IDH04G65C5 SP001632402
每件重量: 2 g
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

碳化矽CoolSiC™ MOSFET和二極體

英飛凌碳化矽CoolSiC™ MOSFET和二極體為能滿足更智慧節能的發電、電力輸送及用電需求的產品組合。CoolSiC產品組合能滿足客戶需求，幫助其縮小系統尺寸，降低中至高功率系統的成本，同時滿足最高的品質標準，延長系統使用壽命，可靠度大受保證。客戶一方面可透過CoolSiC達到最嚴格的效率目標，另一方面則能降低操作系統的成本。產品組合中包括CoolSiC肖特基二極體、CoolSiC混合式模組、CoolSiC MOSFET模組和獨立式裝置，以及用於驅動碳化矽裝置的EiceDRIVER™閘極驅動器IC。

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。