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IKQ100N120CH7XKSA1

Name: Infineon IKQ100N120CH7XKSA1
Brand: Infineon Technologies
SKU: 726-Q100N120CH7XKSA1
Price: 90.26 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

726-Q100N120CH7XKSA1

製造商編號：

IKQ100N120CH7XKSA1

製造商：

Infineon Technologies

說明：

IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package

規格書:

IKQ100N120CH7XKSA1 規格書 (PDF)

ECAD模型:

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庫存量: 650

庫存：: 650

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在途量:: 710
工廠前置作業時間：: 26

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$90.26	HK$90.26
	HK$53.76	HK$537.60
	HK$48.91	HK$4,891.00

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	IGBT
RoHS:
柵極發射機最大電壓:	- 20 V, 20 V
系列:	IGBT7 H7
封裝:	Tube
品牌:	Infineon Technologies
組裝國家:	Not Available
擴散國:	Not Available
原產國:	DE
產品類型:	IGBT Transistors
原廠包裝數量:	240
子類別:	IGBTs
公司名稱:	TRENCHSTOP
零件號別名:	IKQ100N120CH7 SP005578284

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篩選文檔:

規格書

IKQ100N120CH7XKSA1 規格書 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7^th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.