IS66WVE2M16EALL-70BLI

ISSI
870-E2M16EALL70BLI
IS66WVE2M16EALL-70BLI

製造商:

說明:
SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 310

庫存:
310 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1   上限: 200
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$63.62 HK$63.62
HK$59.18 HK$591.80
HK$57.38 HK$1,434.50
HK$56.06 HK$2,803.00
HK$54.75 HK$5,475.00

商品屬性 屬性值 選擇屬性
ISSI
產品類型: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
品牌: ISSI
組裝國家: Not Available
擴散國: Not Available
原產國: TW
濕度敏感: Yes
產品類型: SRAM
系列: IS66WVE2M16EALL
原廠包裝數量: 480
子類別: Memory & Data Storage
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所選屬性: 0

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CNHTS:
8542319090
CAHTS:
8542320020
USHTS:
8542320002
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.