PJA3414_R1_00001

Name: Panjit PJA3414_R1_00001
Brand: Panjit
SKU: 241-PJA3414_R1_00001
Price: 3.86 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

241-PJA3414_R1_00001

製造商編號：

PJA3414_R1_00001

製造商：

Panjit

說明：

MOSFET 30V P-Channel Enhancement Mode MOSFET

規格書:

PJA3414_R1_00001 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Panjit PJA3414_R1_00001的資訊

庫存量: 1,959

庫存：: 1,959 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 52 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$3.86	HK$3.86
	HK$2.87	HK$28.70
	HK$1.63	HK$163.00
	HK$1.10	HK$550.00
	HK$0.838	HK$838.00
完整捲（訂購多個3000）
	HK$0.69	HK$2,070.00
	HK$0.625	HK$3,750.00
	HK$0.51	HK$4,590.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Panjit
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	SOT-23-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	20 V
Id - C連續漏極電流:	5.2 A
Rds On - 漏-源電阻:	36 mOhms
Vgs - 閘極-源極電壓:	- 12 V, 12 V
Vgs th - 門源門限電壓 :	1.2 V
Qg - 閘極充電:	4.1 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	1.25 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Panjit
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	TW
下降時間:	7 ns
產品類型:	MOSFETs
上升時間:	10 ns
系列:	PJA
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	30 ns
標準開啟延遲時間:	14 ns
每件重量:	8 mg

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

PJA3414_R1_00001 規格書 (PDF)

Application Notes

Understanding Medium Voltage and Super Junction MOSFET Datasheet Parameters (PDF)

PCN

此功能需要啟用JavaScript。

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.

30V & 40V Automotive P-Channel MOSFETs

PANJIT 30V and 40V Automotive P-Channel MOSFETs are AEC-Q101 qualified MOSFETs with an ON resistance of 1Ω and a high junction temperature of 175°C. These P-channel MOSFETs are an ideal choice for automotive design engineers looking to simplify circuitry and enhance performance. The 30V to 40V P-channel MOSFETs are lead-free and EU RoHS 2.0 compliant. These P-channel MOSFETs are available in various packages, including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, TO-263AB, and TO-263-7L. The 30V to 40V P-channel MOSFETs are 100% Unclamped Inductive Switching (UIS) tested. Typical applications include reverse polarity protection, battery-powered equipment, brushed DC motors, electronic steering, oil/water pumps, and primary 12V systems.