PJQ4439EP_R2_00201

Name: Panjit PJQ4439EP_R2_00201
Brand: Panjit
SKU: 241-PJQ4439EPR200201
Price: 1.57 HKD
Availability: OutOfStock

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Mouser 編號：

241-PJQ4439EPR200201

製造商編號：

PJQ4439EP_R2_00201

製造商：

Panjit

說明：

MOSFET 30V P-Channel Standard Trench MOSFET

壽命週期:

新產品:

該製造商的新產品。

規格書:

PJQ4439EP_R2_00201 規格書 (PDF)

ECAD模型:

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庫存：: 暫無庫存

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 20 週工廠預計生產時間。

輸入數量：

最少： 5000 多個： 5000

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

此產品免費航運

Pricing (HKD)

數量	單價	總價
完整捲（訂購多個5000）
	HK$1.57	HK$7,850.00
	HK$1.51	HK$15,100.00

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商品屬性	屬性值	選擇屬性
製造商:	Panjit
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	DFN-3333-8
晶體管極性:	P-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	30 V
Id - C連續漏極電流:	30 A
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	22 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	2.1 W
通道模式:	Enhancement
封裝:	Reel
品牌:	Panjit
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
下降時間:	40 ns
產品類型:	MOSFETs
上升時間:	3 ns
原廠包裝數量:	5000
子類別:	Transistors
晶體管類型:	1 P-Channel
標準斷開延遲時間:	36 ns
標準開啟延遲時間:	7 ns
零件號別名:	PJQ4439EP
每件重量:	30.495 mg

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所選屬性: 0

篩選文檔:

規格書

PJQ4439EP_R2_00201 規格書 (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PJQx43 30V P-Channel Enhancement Mode MOSFETs

PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs are reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature range. These MOSFETs are 100% UIS tested and are available in the DFN5060X-8L and DFN3333-8L packages. The PJQx43 P-Channel MOSFETs are lead-free in compliance with EU RoHS 2.0 and are green molding compounds as per IEC 61249 standard.

Power MOSFETs for Wireless Charging Transmitters

PANJIT Power MOSFETs for Wireless Charging Transmitters provide an advanced solution for the wireless chargers to work properly and efficiently. These wireless charging transmitters are designed to transfer the electromagnetic field to the battery receiver of its application. The power MOSFETs are assembled in a low-profile package that saves space while delivering similar on-resistance and thermal resistance. These devices feature low switching losses, high switching frequency operation, low operating temperature, and low gate drive losses. The power MOSFETs are ideally used in wireless charging pads, wireless charging sockets, wireless charging cases, and wireless charging stations.