Name: Toshiba TRS16N65FB,S1Q
Brand: Toshiba
SKU: 757-TRS16N65FBS1Q
Price: 65.68 HKD
Availability: InStock

說明：

碳化矽肖特基二極管 SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A

Pricing (HKD)

數量	單價	總價
	HK$65.68	HK$65.68
	HK$44.88	HK$448.80
	HK$32.63	HK$3,915.60

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商品屬性	屬性值	選擇屬性
製造商:	Toshiba
產品類型:	碳化矽肖特基二極管
RoHS:
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
配置:	Dual Anode Common Cathode
If - 順向電流:	16 A
Vrrm - 重複反向電壓:	650 V
Vf - 順向電壓:	1.6 V
Ifsm - 順向浪湧電流:	130 A
Ir - 反向電流:	400 nA
最高工作溫度:	+ 175 C
封裝:	Tube
品牌:	Toshiba
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
Pd - 功率消耗 :	166 W
產品類型:	SiC Schottky Diodes
原廠包裝數量:	30
子類別:	Diodes & Rectifiers

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所選屬性: 0

篩選文檔:

規格書

TRS16N65FB,S1Q 規格書 (PDF)

USHTS:: 8541100080
ECCN:: EAR99

TRSxxN65FB 650V SiC Schottky Barrier Diodes

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes (SBDs) are the 2nd generation Silicon Carbide (SiC) SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design. These devices feature high surge current capabilities and low-loss characteristics with non-repetitive peak forward surge current ratings. The Toshiba TRSxxN65FB diodes use the TO-247 package and offer four (12A, 16A, 20A, and 24A) forward DC ratings (both legs) supporting increased equipment power. The thin wafer technology ensures low forward voltages and low switching losses. Typical applications include Power-Factor Correction (PFC), solar inverters, servers, Uninterruptible Power Supplies (UPS), communication equipment, multi-function printers, DC-DC converters, and electric vehicle power supply facilities.

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.