UF3C065040B3

onsemi
431-UF3C065040B3
UF3C065040B3

製造商：

說明：
碳化矽MOSFET 650V/40MOSICFETG3TO263

壽命週期:
NRND:
不建議用於新設計。
規格書:
ECAD模型:
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庫存量: 188

庫存：
188 可立即送貨
工廠前置作業時間：
31 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個800）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$126.26 HK$126.26
HK$89.10 HK$891.00
HK$81.05 HK$8,105.00
完整捲（訂購多個800）
HK$76.12 HK$60,896.00
2,400 報價
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
650 V
41 A
52 mOhms
- 25 V, + 25 V
4 V
51 nC
- 55 C
+ 175 C
176 W
Enhancement
AEC-Q101
SiC FET
品牌: onsemi
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: SiC MOSFETS
系列: UF3C
原廠包裝數量: 800
子類別: Transistors
技術: SiC
每件重量: 2.414 g
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所選屬性: 0

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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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