UF3C120150B7S

onsemi
431-UF3C120150B7S
UF3C120150B7S

製造商：

說明：
碳化矽MOSFET 1200V/150MOSICFETG3TO263-7

規格書:
ECAD模型:
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庫存量: 384

庫存：
384 可立即送貨
工廠前置作業時間：
22 週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個800）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$94.37 HK$94.37
HK$65.51 HK$655.10
HK$55.49 HK$5,549.00
HK$51.79 HK$25,895.00
完整捲（訂購多個800）
HK$51.79 HK$41,432.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
17 A
150 mOhms
- 25 V, + 25 V
4.4 V
25.7 nC
- 55 C
+ 175 C
136 W
Enhancement
SiC FET
品牌: onsemi
合規: Done
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 8 ns
濕度敏感: Yes
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品類型: SiC MOSFETS
上升時間: 6 ns
系列: UF3C
原廠包裝數量: 800
子類別: Transistors
技術: SiC
標準斷開延遲時間: 32 ns
標準開啟延遲時間: 32 ns
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所選屬性: 0

規格書

PCN

此功能需要啟用JavaScript。

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

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