|
|
MOSFET 20V 2.0A 3.1W 215mohm @ 4.5V
- SI4829DY-T1-E3
- Vishay / Siliconix
-
1:
HK$9.62
-
暫無庫存
|
Mouser 元件編號
781-SI4829DY-E3
|
Vishay / Siliconix
|
MOSFET 20V 2.0A 3.1W 215mohm @ 4.5V
|
|
暫無庫存
|
|
|
HK$9.62
|
|
|
HK$6.85
|
|
|
HK$4.27
|
|
|
HK$2.94
|
|
|
HK$2.15
|
|
|
檢視
|
|
|
HK$2.53
|
|
|
HK$1.89
|
|
|
HK$1.76
|
|
|
HK$1.59
|
|
最少: 1
倍數: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R020M1HXKSA1
- Infineon Technologies
-
1:
HK$160.45
-
2,868庫存量
-
357在途量
|
Mouser 元件編號
726-IMZA120R020M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
|
|
2,868庫存量
357在途量
|
|
最少: 1
倍數: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R020M1HXKSA1
- Infineon Technologies
-
1:
HK$157.08
-
341庫存量
|
Mouser 元件編號
726-IMW120R020M1HXKS
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
|
|
341庫存量
|
|
最少: 1
倍數: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
|
|
|
IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
- IKW50N65ET7XKSA1
- Infineon Technologies
-
1:
HK$41.10
-
567庫存量
|
Mouser 元件編號
726-IKW50N65ET7XKSA1
|
Infineon Technologies
|
IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
|
|
567庫存量
|
|
|
HK$41.10
|
|
|
HK$26.22
|
|
|
HK$21.29
|
|
|
HK$16.77
|
|
最少: 1
倍數: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
雙極結晶體管 - BJT SOT323 65V .1A PNP BJT
- BC857CW-QX
- Nexperia
-
1:
HK$1.89
-
|
Mouser 元件編號
771-BC857CW-QX
|
Nexperia
|
雙極結晶體管 - BJT SOT323 65V .1A PNP BJT
|
|
|
|
|
HK$1.89
|
|
|
HK$0.88
|
|
|
HK$0.551
|
|
|
HK$0.378
|
|
|
HK$0.321
|
|
|
HK$0.222
|
|
最少: 1
倍數: 1
:
3,000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-323-3
|
|
|
|
IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
- IKW75N65ET7XKSA1
- Infineon Technologies
-
1:
HK$51.46
-
|
Mouser 元件編號
726-IKW75N65ET7XKSA1
|
Infineon Technologies
|
IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
|
|
|
|
|
HK$51.46
|
|
|
HK$30.74
|
|
|
HK$25.65
|
|
|
HK$24.66
|
|
最少: 1
倍數: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBT 模組 LOW POWER ECONO
Infineon Technologies IFS150B12N3E4PB50BPSA1
- IFS150B12N3E4PB50BPSA1
- Infineon Technologies
-
6:
HK$1,453.54
-
無庫存前置作業時間 13 週
|
Mouser 元件編號
726-IFS150B12N3E4PB5
|
Infineon Technologies
|
IGBT 模組 LOW POWER ECONO
|
|
無庫存前置作業時間 13 週
|
|
|
HK$1,453.54
|
|
|
HK$1,214.67
|
|
|
報價
|
|
|
報價
|
|
最少: 6
倍數: 6
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
雙極結晶體管 - BJT SOT323 65V .1A PNP BJT
- BC857CW-QF
- Nexperia
-
1:
HK$2.47
-
無庫存前置作業時間 53 週
|
Mouser 元件編號
771-BC857CW-QF
|
Nexperia
|
雙極結晶體管 - BJT SOT323 65V .1A PNP BJT
|
|
無庫存前置作業時間 53 週
|
|
|
HK$2.47
|
|
|
HK$1.03
|
|
|
HK$0.551
|
|
|
HK$0.378
|
|
|
檢視
|
|
|
HK$0.173
|
|
|
HK$0.321
|
|
|
HK$0.279
|
|
|
HK$0.23
|
|
|
HK$0.173
|
|
最少: 1
倍數: 1
:
10,000
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SOT-323-3
|
|