Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
