OptiMOS 7 系列 MOSFET

結果: 74
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
Infineon Technologies MOSFET MOSFET_(75V 120V( 5,717庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 200 A 2.3 mOhms - 20 V, 20 V 3.2 V 63 nC - 55 C + 175 C 169 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V( 6,379庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 165 A 2.4 mOhms - 20 V, 20 V 3.2 V 51.5 nC - 55 C + 175 C 148 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(75V 120V( 6,860庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 120 A 3.4 mOhms - 20 V, 20 V 3.2 V 35.2 nC - 55 C + 175 C 118 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V) 237庫存量
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-5-1 N-Channel 1 Channel 40 V 455 A 510 uOhms - 20 V, 20 V 3 V 110 nC - 55 C + 175 C 198 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 15V-30V 5,752庫存量
3,000在途量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT VSON-6 N-Channel 1 Channel 15 V 129 A 1.8 mOhms - 7 V, 7 V 2 V 7.5 nC - 55 C + 150 C 39 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor 261庫存量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 65 A 5.04 mOhms 20 V 1.8 V 11 nC - 55 C + 175 C 40 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET 80V, N-Ch, 1.3 mohm max, Automotive MOSFET, SSO8 (5x6), OptiMOS 7
5,000在途量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 274 A 1.3 mOhms - 20 V, 20 V 3.2 V 89 nC - 55 C + 175 C 219 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 100V, N-Ch, 2.1 mohm max, Automotive MOSFET, SSO8 (5x6), OptiMOS 7
15,000在途量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 100 V 220 A 2.1 mOhms - 20 V, 20 V 3.2 V 105 nC - 55 C + 175 C 217 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 40V 4,974庫存量
9,919在途量
最少: 1
倍數: 1
: 5,000

Si SMD/SMT N-Channel 1 Channel 40 V 541 A 420 uOhms - 20 V, 20 V 1.8 V 79 nC - 55 C + 175 C 234 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V)
最少: 1
倍數: 1
: 2,000

Si SMD/SMT HSOF-5-2 N-Channel 1 Channel 40 V 290 A 820 uOhms - 20 V, 20 V 3 V 60 nC - 55 C + 175 C 133 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 7 Power-Transistor
最少: 1
倍數: 1
: 2,000

Si SMD/SMT PG-LHDSO-10-3 N-Channel 1 Channel 40 V 425 A 770 uOhms 20 V 3 V 112 nC - 55 C + 175 C 205 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V)
最少: 1
倍數: 1
: 5,000

Si OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 40 V, N-Ch, 2.46 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
最少: 1
倍數: 1
: 5,000

Si SMD/SMT PG-TDSON-8 N-Channel 2 Channel 40 V 129 A 2.46 mOhms 20 V 3 V 25 nC - 55 C + 175 C 75 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET MOSFET_(20V 40V)
5,000在途量
最少: 1
倍數: 1
: 5,000

Si OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 77 A 4.4 mOhms 20 V 1.8 V 15 nC - 55 C + 175 C 50 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 184 A 1.53 mOhms 20 V 3 V 41 nC - 55 C + 175 C 96 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 147 A 1.95 mOhms 20 V 3 V 30 nC - 55 C + 175 C 81 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 117 A 2.67 mOhms 20 V 3 V 23 nC - 55 C + 175 C 70 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 91 A 3.65 mOhms 20 V 3 V 16 nC - 55 C + 175 C 57 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40V in SSO4G 5x6 for IMS Substrates & Legacy Compatibility 無庫存前置作業時間 18 週
最少: 5,000
倍數: 5,000
: 5,000

Si SMD/SMT THSOG-4 N-Channel 1 Channel 40 V 79 A 4.7 mOhms 20 V 3 V 13 nC - 55 C + 175 C 50 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET 80 V, N-Ch, 3.60 m max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS 7 無庫存前置作業時間 53 週
最少: 2,000
倍數: 2,000
: 2,000

Si SMD/SMT LHDSO-10 N-Channel 1 Channel 80 V 129 A 3.6 mOhms 20 V 3.2 V 36 nC - 55 C + 175 C 118 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40 V motor-drives optimized power MOSFET in a PQFN 5x6 Dual Side Cooled package. 無庫存前置作業時間 53 週
最少: 4,000
倍數: 4,000
: 4,000

Si SMD/SMT WSON-8 N-Channel 1 Channel 40 V 443 A 520 uOhms 20 V 3.2 V 112 nC - 55 C + 175 C 214 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40 V motor-drives optimized power MOSFET in a PQFN 5x6 Dual Side Cooled package 無庫存前置作業時間 53 週
最少: 4,000
倍數: 4,000
: 4,000

Si SMD/SMT WSON-8 N-Channel 1 Channel 40 V 339 A 650 uOhms 20 V 3.2 V 81 nC - 55 C + 175 C 167 W Enhancement OptiMOS Reel
Infineon Technologies MOSFET OptiMOS 7 40 V motor-drives optimized power MOSFET in a PQFN 5x6 Dual Side Cooled package. 無庫存前置作業時間 53 週
最少: 4,000
倍數: 4,000
: 4,000

Si SMD/SMT WSON-8 N-Channel 1 Channel 40 V 289 A 820 uOhms 20 V 3.2 V 65 nC - 55 C + 175 C 150 W Enhancement OptiMOS Reel