MOSFET

結果: 1,594
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝

IXYS MOSFET 120 Amps 150V 0.016 Rds 384庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 120 A 16 mOhms - 20 V, 20 V 3 V 150 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET 140 Amps 100V 0.011 Rds 1,276庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 140 A 11 mOhms - 20 V, 20 V 5 V 155 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds 261庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 24 A 420 mOhms - 30 V, 30 V 6.5 V 130 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFET 600V 30A 1,733庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 30 V, 30 V 2.5 V 82 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFET TRENCHT2 PWR MOSFET 75V 520A 1,197庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 75 V 520 A 2.2 mOhms - 20 V, 20 V 5 V 545 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFET 600V 64A 370庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube

IXYS MOSFET TO220 650V 34A N-CH X3CLASS 684庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 100 mOhms - 20 V, 20 V 5.2 V 29 nC - 55 C + 150 C 446 W Enhancement Tube
IXYS MOSFET TO220 300V 72A N-CH X3CLASS 974庫存量
700在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFET 96 Amps 200V 0.024 Rds 668庫存量
570在途量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 5 V 145 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 650V/100A Ultra Junction X2 118庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFET 120 Amps 250 V 0.24 Ohm Rds 170庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 24 mOhms - 20 V, 20 V 5 V 185 nC - 55 C + 175 C 700 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A 826庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 360 A 2.9 mOhms - 20 V, 20 V 2.5 V 525 nC - 55 C + 175 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFET PolarP2 Power MOSFET 806庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET TenchP Power MOSFET 2,094庫存量
1,450在途量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) P-Channel 1 Channel 200 V 32 A 130 mOhms - 15 V, 15 V 4 V 180 nC - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFET 24 Amps 500V 0.30 Ohms Rds 311庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 24 A 300 mOhms - 30 V, 30 V 5 V 160 nC - 55 C + 150 C 400 W Enhancement Tube
IXYS MOSFET 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET 396庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFET TrenchP Power MOSFET 549庫存量
390在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 P-Channel 1 Channel 200 V 68 A 55 mOhms - 15 V, 15 V 4 V 380 nC - 55 C + 150 C 568 W Enhancement Tube

IXYS MOSFET High Voltage Power MOSFET 272庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.5 kV 2.5 A 6 Ohms - 30 V, 30 V 5 V 44.5 nC - 55 C + 150 C 110 W Enhancement Tube
IXYS MOSFET 200V, 120A, Ultra junction X4, TO-220 package, MOSFET 723庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 9.5 mOhms - 20 V, 20 V 2.5 V 108 nC - 55 C + 175 C 417 W Enhancement Tube
IXYS MOSFET TenchP Power MOSFET 2,772庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 P-Channel 1 Channel 200 V 32 A 130 mOhms - 15 V, 15 V 4 V 185 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFET TO220 200V 94A N-CH X4CLASS 719庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 94 A 10.6 mOhms - 20 V, 20 V 4.5 V 77 nC - 55 C + 175 C 360 W Enhancement Tube
IXYS MOSFET 170 Amps 100V 0.009 Ohm Rds 1,252庫存量
1,170在途量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 100 V 170 A 9 mOhms - 20 V, 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement Tube
IXYS MOSFET 96 Amps 200V 0.024 Rds 316庫存量
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 96 A 24 mOhms - 20 V, 20 V 2.5 V 145 nC - 55 C + 175 C 600 W Enhancement Tube
IXYS MOSFET TO263 650V 34A N-CH X3CLASS 659庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 34 A 100 mOhms - 20 V, 20 V 5.2 V 29 nC - 55 C + 150 C 446 W Enhancement Tube

IXYS MOSFET 500V 16A 2,989庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube