Linear L2 MOSFET

結果: 30
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (HKD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱 封裝

IXYS MOSFET 40 Amps 500V 510庫存量
740在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 40 A 170 mOhms - 20 V, 20 V 4.5 V 320 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube

IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 110A 282庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 110 A 24 mOhms - 20 V, 20 V 4.5 V 500 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET 40 Amps 500V 378庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 500 V 40 A 170 mOhms - 20 V, 20 V 4.5 V 320 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET TO247 N-CH 75V 140A 26庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 140 A 11 mOhms - 20 V, 20 V 2 V 275 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube

IXYS MOSFET 30 Amps 600V 3,778庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 20 V, 20 V 2.5 V 335 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET 60 Amps 500V 685庫存量
1,098在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 4.5 V 610 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube

IXYS MOSFET L2 Linear Power MOSFET 1,100庫存量
2,880在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 200 A 11 mOhms - 20 V, 20 V 4.5 V 540 nC - 55 C + 150 C 1.04 kW Enhancement Linear L2 Tube
IXYS MOSFET TO263 500V 15A N-CH LINEAR 378庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 15 A 480 mOhms - 20 V, 20 V 2.5 V 123 nC - 55 C + 150 C 300 W Enhancement Linear L2 Tube

IXYS MOSFET 30.0 Amps 500V 0.002 Rds 266庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 30 A 200 mOhms - 20 V, 20 V 4.5 V 240 nC - 55 C + 150 C 400 W Enhancement Linear L2 Tube

IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 60A 224庫存量
300在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 60 A 45 mOhms - 20 V, 20 V 4.5 V 255 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET L2 Linear Power MOSFET 123庫存量
1,525在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 200 A 11 mOhms - 20 V, 20 V 2 V 540 nC - 55 C + 150 C 1.04 kW Enhancement Linear L2 Tube
IXYS MOSFET LINEAR L2 SERIES MOSFET 500V 15A 641庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 15 A 480 mOhms - 20 V, 20 V 4.5 V 123 nC - 55 C + 150 C 300 W Enhancement Linear L2 Tube
IXYS MOSFET 90 Amps 250V 248庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 250 V 90 A 33 mOhms - 20 V, 20 V 4.5 V 640 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube

IXYS MOSFET TO247 100V 64A N-CH LINEAR 119庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 64 A 32 mOhms - 20 V, 20 V 2.5 V 100 nC - 55 C + 150 C 357 W Enhancement Linear L2 Tube
IXYS MOSFET 90 Amps 250V 49庫存量
393在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 90 A 33 mOhms - 20 V, 20 V 2 V 640 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET TO220 N-CH 75V 80A 174庫存量
100在途量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 80 A 24 mOhms - 20 V, 20 V 2.5 V 103 nC - 55 C + 150 C 357 W Enhancement Linear L2 Tube
IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 60A 15庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 60 A 45 mOhms - 20 V, 20 V 4.5 V 255 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFET LINEAR L2 SERIES MOSFET 200V 110A
1,175在途量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 110 A 24 mOhms - 20 V, 20 V 4.5 V 500 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET TO263 250V 30A N-CH LINEAR
50在途量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 30 A 140 mOhms - 20 V, 20 V 2.5 V 130 nC - 55 C + 150 C 355 W Enhancement Linear L2 Tube

IXYS MOSFET TO247 N-CH 75V 80A
600在途量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 80 A 24 mOhms - 20 V, 20 V 2.5 V 103 nC - 55 C + 150 C 357 W Enhancement Linear L2 Tube
IXYS MOSFET 30 Amps 600V
最少: 1
倍數: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 20 V, 20 V 4.5 V 335 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube

IXYS MOSFET 60 Amps 500V
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 2.5 V 610 nC - 55 C + 150 C 960 W Enhancement Linear L2 Tube
IXYS MOSFET IXTA15N50L2 TRL 無庫存前置作業時間 27 週
最少: 800
倍數: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 15 A 480 mOhms - 20 V, 20 V 2.5 V 123 nC - 55 C + 150 C 300 W Enhancement Linear L2 Reel
IXYS MOSFET IXTA64N10L2 TRL 無庫存前置作業時間 26 週
最少: 800
倍數: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 64 A 32 mOhms - 20 V, 20 V 2.5 V 100 nC - 55 C + 150 C 357 W Enhancement Linear L2 Reel
IXYS MOSFET IXTA80N075L2 TRL 無庫存前置作業時間 26 週
最少: 800
倍數: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 75 V 80 A 24 mOhms - 20 V, 20 V 2.5 V 103 nC - 55 C + 150 C 357 W Enhancement Linear L2 Reel