Infineon 碳化矽MOSFET

結果: 297
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Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 619庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V,+ 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 1,025庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 688庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, + 23V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 813庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 709庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 644庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 140庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 166庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 230庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 164庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 92 A 53.8 mOhms - 10 V, + 23 V 4.2 V 78 nC - 55 C + 175 C 380 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 208庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 74 A 67.6 Ohms - 10 V, + 25 V 5.1 V 62 nC - 55 C + 175 C 330 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 214庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 65 A 35 mOhms - 10 V, + 25 V 4.2 V 54 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 244庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.4 kV 52 A 38 mOhms - 10 V, + 25 V 5.1 V 41 nC - 55 C + 175 C 242 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 653庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 64 A 30 mOhms - 5 V, + 23 V 5.7 V 67 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 437庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 753庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC


Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 861庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 33 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 175 C 140 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,019庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 45 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 175 C 183 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 125庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 188庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 141庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 232庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 38 A 69 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 164庫存量
240在途量
最少: 1
倍數: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 28 A 103 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 218庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 2,022庫存量
750在途量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 116 A 25 mOhms - 10 V, + 25 V 5.1 V 82 nC - 55 C + 175 C 577 W Enhancement CoolSiC